Our repertory includes the precise positioning of detector chips with Si, SiC, GaP and other compound semiconductors for single-, quadrant-, line- and array configurations.
- Module development from semiconductor chip to package
- Combination of detector chips with optical components (filter, gratings and lenses)
- Integration of detector-electronics and amplifiers into the detector package for minimized noise and interference
- Integration of peltier-coolers and temperature sensors
- Wide variety of standard and custom packages: TO-casings, SMD-casings, Ceramic (HTCC, LTCC)
- Detector materials:
SiC: 200-400 nm
Si: 200-1100 nm
GaP: 200-550 nm
InGaAs: 600-2500 nm
Ge: 800-1800 nm
Besides the listed Si- and SiC-detectors with integrated amplifier we also producing a large volume of detectors, single photodiodes, quadrant detectors, lines and arrays in special packages. For more information please contact us directly or the distributor responsible for your region.